Wide field-of-view (FOV) optics are essential components in many optical systems, with applications spanning imaging, display, sensing, and beam steering. Conventional refractive wide FOV optics often involve multiple stacked lenses, resulting in large size and weight as well as high cost. Metasurface lenses or metalenses promise a viable solution to realizing wide FOV optics without complex lens assembly. We review the various architectures of wide FOV metalenses, elucidate their fundamental operating principles and design trade-offs, and quantitatively evaluate and contrast their imaging performances. Emerging applications enabled by wide FOV metasurface optics are also discussed.

Wide field-of-view (FOV) optics are widely used in various imaging, display, and sensing applications. Conventional wide FOV optics rely on complicated lens assembly comprising multiple elements to suppress coma and other Seidel aberrations. The emergence of flat optics exemplified by metasurfaces and diffractive optical elements (DOEs) offers a promising route to expand the FOV without escalating complexity of optical systems. To date, design of large FOV flat lenses has been relying upon iterative numerical optimization. Here, we derive, for the first time, to the best of our knowledge, an analytical solution to enable computationally efficient design of flat lenses with an ultra-wide FOV approaching 180°. This analytical theory further provides critical insights into working principles and otherwise non-intuitive design trade-offs of wide FOV optics.

The rapid development of information technology has fueled an ever-increasing demand for ultrafast and ultralow-energy-consumption computing. Existing computing instruments are pre-dominantly electronic processors, which use electrons as information carriers and possess von Neumann architecture featured by physical separation of storage and processing. The scaling of computing speed is limited not only by data transfer between memory and processing units, but also by RC delay associated with integrated circuits. Moreover, excessive heating due to Ohmic losses is becoming a severe bottleneck for both speed and power consumption scaling. Using photons as information carriers is a promising alternative. Owing to the weak third-order optical nonlinearity of conventional materials, building integrated photonic computing chips under traditional von Neumann architecture has been a challenge. Here, we report a new all-optical computing framework to realize ultrafast and ultralow-energy-consumption all-optical computing based on convolutional neural networks. The device is constructed from cascaded silicon Y-shaped waveguides with side-coupled silicon waveguide segments which we termed “weight modulators” to enable complete phase and amplitude control in each waveguide branch. The generic device concept can be used for equation solving, multifunctional logic operations as well as many other mathematical operations. Multiple computing functions including transcendental equation solvers, multifarious logic gate operators, and half-adders were experimentally demonstrated to validate the all-optical computing performances. The time-of-flight of light through the network structure corresponds to an ultrafast computing time of the order of several picoseconds with an ultralow energy consumption of dozens of femtojoules per bit. Our approach can be further expanded to fulfill other complex computing tasks based on non-von Neumann architectures and thus paves a new way for on-chip all-optical computing.

A new optical microscopy technique, termed high spatial and temporal resolution synthetic aperture phase microscopy (HISTR-SAPM), is proposed to improve the lateral resolution of wide-field coherent imaging. Under plane wave illumination, the resolution is increased by twofold to around 260 nm, while achieving millisecond-level temporal resolution. In HISTR-SAPM, digital micromirror devices are used to actively change the sample illumination beam angle at high speed with high stability. An off-axis interferometer is used to measure the sample scattered complex fields, which are then processed to reconstruct high-resolution phase images. Using HISTR-SAPM, we are able to map the height profiles of subwavelength photonic structures and resolve the period structures that have 198 nm linewidth and 132 nm gap (i.e., a full pitch of 330 nm). As the reconstruction averages out laser speckle noise while maintaining high temporal resolution, HISTR-SAPM further enables imaging and quantification of nanoscale dynamics of live cells, such as red blood cell membrane fluctuations and subcellular structure dynamics within nucleated cells. We envision that HISTR-SAPM will broadly benefit research in material science and biology.

3D photonics promises to expand the reach of photonics by enabling the extension of traditional applications to nonplanar geometries and adding novel functionalities that cannot be attained with planar devices. Available material options and device geometries are, however, limited by current fabrication methods. In this work, we pioneer a method that allows for placement of integrated photonic device arrays at arbitrary predefined locations in 3D using a fabrication process that capitalizes on the buckling of a 2D pattern. We present theoretical and experimental validation of the deterministic buckling process, thus demonstrating implementation of the technique to realize what we believe to be the first fully packaged 3D integrated photonics platform. Application of the platform for mechanical strain sensing is further demonstrated.

Integrated photonics is poised to become a mainstream solution for high-speed data communications and sensing in harsh radiation environments, such as outer space, high-energy physics facilities, nuclear power plants, and test fusion reactors. Understanding the impact of radiation damage in optical materials and devices is thus a prerequisite to building radiation-hard photonic systems for these applications. In this paper, we report real-time, in situ analysis of radiation damage in integrated photonic devices. The devices, integrated with an optical fiber array package and a baseline-correction temperature sensor, can be remotely interrogated while exposed to ionizing radiation over a long period without compromising their structural and optical integrity. We also introduce a method to deconvolve the radiation damage responses from different constituent materials in a device. The approach was implemented to quantify gamma radiation damage and post-radiation relaxation behavior of SiO2-cladded SiC photonic devices. Our findings suggest that densification induced by Compton scattering displacement defects is the primary mechanism for the observed index change in SiC. Additionally, post-radiation relaxation in amorphous SiC does not restore the original pre-irradiated structural state of the material. Our results further point to the potential of realizing radiation-hard photonic device designs taking advantage of the opposite signs of radiation-induced index changes in SiC and SiO2.

In this paper, we report the experimental characterization of highly nonlinear GeSbS chalcogenide glass waveguides. We used a single-beam characterization protocol that accounts for the magnitude and sign of the real and imaginary parts of the third-order nonlinear susceptibility of integrated Ge23Sb7S70 (GeSbS) chalcogenide glass waveguides in the near-infrared wavelength range at λ=1580 nm. We measured a waveguide nonlinear parameter of 7.0±0.7 W 1·m 1, which corresponds to a nonlinear refractive index of n2=(0.93±0.08)×10 18 m2/W, comparable to that of silicon, but with an 80 times lower two-photon absorption coefficient βTPA=(0.010±0.003) cm/GW, accompanied with linear propagation losses as low as 0.5 dB/cm. The outstanding linear and nonlinear properties of GeSbS, with a measured nonlinear figure of merit FOMTPA=6.0±1.4 at λ=1580 nm, ultimately make it one of the most promising integrated platforms for the realization of nonlinear functionalities.

On-chip spectroscopic sensors have attracted increasing attention for portable and field-deployable chemical detection applications. So far, these sensors largely rely on benchtop tunable lasers for spectroscopic interrogation. Large footprint and mechanical fragility of the sources, however, preclude compact sensing system integration. In this paper, we address the challenge through demonstrating, for the first time to our knowledge, a supercontinuum source integrated on-chip spectroscopic sensor, where we leverage nonlinear Ge22Sb18Se60 chalcogenide glass waveguides as a unified platform for both broadband supercontinuum generation and chemical detection. A home-built, palm-sized femtosecond laser centering at 1560 nm wavelength was used as the pumping source. Sensing capability of the system was validated through quantifying the optical absorption of chloroform solutions at 1695 nm. This work represents an important step towards realizing a miniaturized spectroscopic sensing system based on photonic chips.